Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

被引:72
作者
Gao, B. F. [1 ]
Gehring, P. [1 ]
Burghard, M. [1 ]
Kern, K. [1 ,2 ]
机构
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[2] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland
关键词
SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; SURFACE; SB2TE3; BI2TE3;
D O I
10.1063/1.4719196
中图分类号
O59 [应用物理学];
学科分类号
摘要
We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B-field dependence changes from quadratic to linear. Concomitantly, the resistance-versus-temperature curves evolve from metallic to semiconductor-like, and increasingly strong weak anti-localization behavior is manifested. Analysis of the magnetoresistance data reveals two contributions, namely from the bulk conduction band and from a state inside the bulk gap. The latter is responsible for the linear magnetoresistance and likely represents the topologically protected surface state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719196]
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页数:4
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