Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

被引：71

作者：

Gao, B. F. ^{[1
]}

Gehring, P. ^{[1
]}

Burghard, M. ^{[1
]}

Kern, K. ^{[1
,2
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 21期

关键词：

SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; SURFACE; SB2TE3; BI2TE3;

D O I：

10.1063/1.4719196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B-field dependence changes from quadratic to linear. Concomitantly, the resistance-versus-temperature curves evolve from metallic to semiconductor-like, and increasingly strong weak anti-localization behavior is manifested. Analysis of the magnetoresistance data reveals two contributions, namely from the bulk conduction band and from a state inside the bulk gap. The latter is responsible for the linear magnetoresistance and likely represents the topologically protected surface state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719196]

引用

页数：4

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