Effect of gadolinium adatoms on the transport properties of graphene

被引：16

作者：

Alemani, M. ^{[1
]}

Barfuss, A. ^{[1
]}

Geng, B. ^{[1
]}

Girit, C. ^{[1
]}

Reisenauer, P. ^{[1
]}

Crommie, M. F. ^{[1
,2
]}

Wang, F. ^{[1
,2
]}

Zettl, A. ^{[1
,2
]}

Hellman, F. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

关键词：

SINGLE; GAS;

D O I：

10.1103/PhysRevB.86.075433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes. The doping efficiency of Gd at 77 K reproduces theoretical predictions (0.7 electron per Gd adatom). On raising the sample temperature to even 150 K, clustering effects are observed and substantially modify the transport.

引用

页数：5

共 26 条

[1] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[2] Consolidation of Carbon Nanofiber/Copper Composites by Hot-Pressing and Spark Plasma Sintering: A Comparative Study [J].

Barcena, Jorge ;

Martinez, Vladimir ;

Martinez, Ramon ;

Maudes, Jon ;

Sarries, Jose-Ignacio ;

Caro, Inaki ;

Gonzalez, Javier-Jesus ;

Coleto, Javier .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (03) :1797-1802

[3] First-principles study of metal adatom adsorption on graphene [J].

Chan, Kevin T. ;

Neaton, J. B. ;

Cohen, Marvin L. .

PHYSICAL REVIEW B, 2008, 77 (23)

[4] Charged-impurity scattering in graphene [J].

Chen, J. -H. ;

Jang, C. ;

Adam, S. ;

Fuhrer, M. S. ;

Williams, E. D. ;

Ishigami, M. .

NATURE PHYSICS, 2008, 4 (05) :377-381

[5] Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices [J].

Cheng, Zengguang ;

Zhou, Qiaoyu ;

Wang, Chenxuan ;

Li, Qiang ;

Wang, Chen ;

Fang, Ying .

NANO LETTERS, 2011, 11 (02) :767-771

[6] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane [J].

Elias, D. C. ;

Nair, R. R. ;

Mohiuddin, T. M. G. ;

Morozov, S. V. ;

Blake, P. ;

Halsall, M. P. ;

Ferrari, A. C. ;

Boukhvalov, D. W. ;

Katsnelson, M. I. ;

Geim, A. K. ;

Novoselov, K. S. .

SCIENCE, 2009, 323 (5914) :610-613

[7] Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices [J].

Farmer, Damon B. ;

Golizadeh-Mojarad, Roksana ;

Perebeinos, Vasili ;

Lin, Yu-Ming ;

Tulevski, George S. ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (01) :388-392

[8] Metal-insulator transition and giant negative magnetoresistance in amorphous magnetic rare earth silicon alloys [J].

Hellman, F ;

Tran, MQ ;

Gebala, AE ;

Wilcox, EM ;

Dynes, RC .

PHYSICAL REVIEW LETTERS, 1996, 77 (22) :4652-4655

[9] Evidence of the role of contacts on the observed electron-hole asymmetry in graphene [J].

Huard, B. ;

Stander, N. ;

Sulpizio, J. A. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW B, 2008, 78 (12)

[10] Strong metal adatom-substrate interaction of Gd and Fe with graphene [J].

Hupalo, M. ;

Binz, S. ;

Tringides, M. C. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (04)

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