Effect of gadolinium adatoms on the transport properties of graphene

被引：16

作者：

Alemani, M. ^{[1
]}

Barfuss, A. ^{[1
]}

Geng, B. ^{[1
]}

Girit, C. ^{[1
]}

Reisenauer, P. ^{[1
]}

Crommie, M. F. ^{[1
,2
]}

Wang, F. ^{[1
,2
]}

Zettl, A. ^{[1
,2
]}

Hellman, F. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

关键词：

SINGLE; GAS;

D O I：

10.1103/PhysRevB.86.075433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes. The doping efficiency of Gd at 77 K reproduces theoretical predictions (0.7 electron per Gd adatom). On raising the sample temperature to even 150 K, clustering effects are observed and substantially modify the transport.

引用

页数：5

共 26 条

[1] A self-consistent theory for graphene transport
Adam, Shaffique
Hwang, E. H.
Galitski, V. M.
Das Sarma, S.
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) : 18392 - 18397
[2] Consolidation of Carbon Nanofiber/Copper Composites by Hot-Pressing and Spark Plasma Sintering: A Comparative Study
Barcena, Jorge
Martinez, Vladimir
Martinez, Ramon
Maudes, Jon
Sarries, Jose-Ignacio
Caro, Inaki
Gonzalez, Javier-Jesus
Coleto, Javier
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (03) : 1797 - 1802
[3] First-principles study of metal adatom adsorption on graphene
Chan, Kevin T.
Neaton, J. B.
Cohen, Marvin L.
[J]. PHYSICAL REVIEW B, 2008, 77 (23):
[4] Charged-impurity scattering in graphene
Chen, J. -H.
Jang, C.
Adam, S.
Fuhrer, M. S.
Williams, E. D.
Ishigami, M.
[J]. NATURE PHYSICS, 2008, 4 (05) : 377 - 381
[5] Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices
Cheng, Zengguang
Zhou, Qiaoyu
Wang, Chenxuan
Li, Qiang
Wang, Chen
Fang, Ying
[J]. NANO LETTERS, 2011, 11 (02) : 767 - 771
[6] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
Elias, D. C.
Nair, R. R.
Mohiuddin, T. M. G.
Morozov, S. V.
Blake, P.
Halsall, M. P.
Ferrari, A. C.
Boukhvalov, D. W.
Katsnelson, M. I.
Geim, A. K.
Novoselov, K. S.
[J]. SCIENCE, 2009, 323 (5914) : 610 - 613
[7] Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
Farmer, Damon B.
Golizadeh-Mojarad, Roksana
Perebeinos, Vasili
Lin, Yu-Ming
Tulevski, George S.
Tsang, James C.
Avouris, Phaedon
[J]. NANO LETTERS, 2009, 9 (01) : 388 - 392
[8] Metal-insulator transition and giant negative magnetoresistance in amorphous magnetic rare earth silicon alloys
Hellman, F
Tran, MQ
Gebala, AE
Wilcox, EM
Dynes, RC
[J]. PHYSICAL REVIEW LETTERS, 1996, 77 (22) : 4652 - 4655
[9] Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
Huard, B.
Stander, N.
Sulpizio, J. A.
Goldhaber-Gordon, D.
[J]. PHYSICAL REVIEW B, 2008, 78 (12):
[10] Strong metal adatom-substrate interaction of Gd and Fe with graphene
Hupalo, M.
Binz, S.
Tringides, M. C.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (04)

← 1 2 3 →