Fundamental limits in the external quantum efficiency of single nanowire solar cells

被引:44
|
作者
Heiss, Martin [1 ]
Fontcuberta i Morral, Anna [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, Inst Mat, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会; 欧洲研究理事会;
关键词
HETEROSTRUCTURES; DEVICES; GAP; INP;
D O I
10.1063/1.3672168
中图分类号
O59 [应用物理学];
学科分类号
摘要
The fundamental limits for the measurement of the efficiency of single nanowire solar cell devices are presented. We evaluate the effect of the substrate, light polarization, and existence of Mie resonances in the absorption of the solar spectrum for nanowires with diameters from 10 to 300 nm. We find that the efficiency measured under such configuration can be underestimated between a factor 1.6 and 7.0 for GaAs nanowires and between 6.7 and 15.9 for silicon nanowires. These results constitute a reference for understanding the limits in the measurement of single nanowire devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672168]
引用
收藏
页数:3
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