Single Polymer-Based Ternary Electronic Memory Material and Device

被引：189

作者：

Liu, Shu-Juan ^{[1
]}

Wang, Peng ^{[1
]}

Zhao, Qiang ^{[1
]}

Yang, Hui-Ying ^{[3
]}

Wong, Jenit ^{[3
]}

Sun, Hui-Bin ^{[1
]}

Dong, Xiao-Chen ^{[2
]}

Lin, Wen-Peng ^{[1
]}

Huang, Wei ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Key Lab Organ Elect & Informat Displays, Nanjing 210046, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Inst Adv Mat, Nanjing 210046, Peoples R China

[3] Singapore Univ Technol & Design, Singapore 279623, Singapore

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 21期

基金：

中国国家自然科学基金;

关键词：

data storage; ternary memory devices; organic electronics; polymeric materials; Ir(III) complexes; ELECTRICAL BISTABILITY; DONOR; COPOLYMERS; ELEMENTS; POLY(N-VINYLCARBAZOLE); 1,3,4-OXADIAZOLE; TRIPHENYLAMINE; CONDUCTIVITY; MORPHOLOGY;

D O I：

10.1002/adma.201104307

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A ternary polymer memory device based on a single polymer with on-chain Ir(III) complexes is fabricated by combining multiple memory mechanisms into one system. Excellent ternary memory performances-low reading, writing, and erasing voltages and good stability for all three states-are achieved. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2901 / 2905

页数：5

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