Electrical Transport in Polymer-Covered Silicon Nanowires

被引：7

作者：

Fobelets, K. ^{[1
]}

Ding, P. ^{[1
]}

Kiasari, N. Mohseni ^{[1
]}

Durrani, Z. ^{[1
]}

机构：

[1] Imperial Coll London, Elect & Elect Engn Dept, Kensington SW7 2AZ, England

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2012年 / 11卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

Composite; nanowires (NWs); polymer; surface treatment; SURFACE; SULFONATE); MOSFETS; ENERGY;

D O I：

10.1109/TNANO.2010.2049746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of polymer layers wrapped around n-type Si nanowires (NW) on their electrical characteristics is investigated. The NWs are fabricated via metal induced excessive oxidation and dissolution of Si, and have a diameter of similar to 350 nm. Single wires are covered by various polymer layers. The polymers used are both insulating [poly (methyl methacrylate) (PMMA), polyethylene (PE), polystyrene, and polyethylene oxide (PEO)] and semiconducting poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate). Four-point probe measurements are used to measure the conductivity changes of single NWs. The NW resistivity increases with PE and PMMA coverage, but decreases with PEO coverage. The changes are attributed to carrier exchange between the polymer and NW. The measurements also confirm active electron trapping with PE coverage that is not observed with the other polymers.

引用

页码：661 / 665

页数：5

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