Hard X-ray photoemission spectroscopy: Variable depth analysis of bulk, surface and interface electronic properties

被引：47

作者：

Panaccione, Giancarlo ^{[1
]}

Kobayashi, Keisuke ^{[2
,3
]}

机构：

[1] CNR, IOM, Lab TASC, I-34149 Trieste, Italy

[2] Hiroshima Univ, Hiroshima Synchrotron RadiationCtr, Higashihiroshima, Japan

[3] Natl Inst Mat Sci, NIMS Beamline Stn Spring 8, Sayo, Hyogo 6795148, Japan

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 3-4期

关键词：

Hard X-ray Photoelectron Spectroscopy; Bulk properties; HIGH-ENERGY PHOTOEMISSION; SYNCHROTRON-RADIATION; PARAMETERS; SYSTEMS;

D O I：

10.1016/j.susc.2011.10.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic properties of surfaces and buried interfaces can vary considerably in comparison to the bulk. In turn, analyzing bulk properties, without including those of the surface, is understandably challenging. Hard X-ray photoelectron spectroscopy (HAXPES) allows the well known ability of photoemission to interrogate the electronic structure of material systems with bulk volume sensitivity. This is achieved by tuning the kinetic energy range of the analyzed photoelectrons in the multi-key regime. This unique ability to probe truly bulk properties strongly compliments normal photoemission, which generally probes surface electronic structure that is different than the bulk selected examples of HAXPES and possible implications towards the study of complex oxide-based interfaces and highly correlated systems are discussed. (C) 2011 Elsevier B.V. All rights reserved.

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页码：125 / 129

页数：5

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