Preparation of PZT thin films for low voltage application by sol-gel method

被引：0
|
作者：
Soyama, N [1 ]
Maki, K [1 ]
Mori, S [1 ]
Ogi, K [1 ]
机构：
[1] Mitsubishi Mat Corp, Sanda Plant, Sanda, Hyogo 6691322, Japan
来源：
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II | 2001年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
PZT ultra thin films with film thickness of 90nm were prepared by sol-gel method. By using modified sol-gel solutions, 90nm-thick PZT films with good surface morphology were obtained even on Pt/SiO2/Si substrate, in which nothing worked as seeding layer. The obtained PZT films with various compositions were evaluated. Use of the modified solutions made it possible to make the film thinner without degradation of the properties. P-E hysteresis curve for PZT(30/70) films with film thickness of 90nm was saturated at about IV and the Pr was 28 uC/cm(2). As a result, PZT thin films from the modified solution exhibited potential for low voltage drive FeRAM.
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页码：611 / 614
页数：4
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