A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

被引：24

作者：

Abduev, Aslan ^{[1
]}

Akmedov, Akhmed ^{[1
]}

Asvarov, Abil ^{[1
,2
]}

Chiolerio, Alessandro ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Russia

[2] Ist Italiano Tecnol, Ctr Space Human Robot, I-10129 Turin, Italy

来源：

PLASMA PROCESSES AND POLYMERS | 2015年 / 12卷 / 08期

关键词：

nucleation and growth; sputtering; thin films; transparent conductive oxide; zinc oxide; PULSED-LASER DEPOSITION; THIN-FILMS; ELECTRICAL-PROPERTIES; POLARITY; GLASS; SUBSTRATE; AL;

D O I：

10.1002/ppap.201400230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga-doped ZnO (GZO) thin films are recently raising both scientific and industrial interests, due to the lack of natural resources. Indium is a crucial raw material, due to ITO modern touchscreen market. By doping ZnO with Ga conductive transparent thin films with various concentrations of dopant are prepared by DC magnetron sputtering from ceramic targets. It is shown how the Ga content plays an important role on the growth kinetics on an initial stage of the film formation and hence on the morphologies, microstructure and electrical properties of as-grown GZO films. A mechanism explaining the role of Ga content on the nucleation process and the structure of growing films is proposed. Based on this mechanism, it is successfully demonstrated that the crystalline quality and hence the conductivity of GZO thin films can be improved by using a GZO buffer layer.

引用

页码：725 / 733

页数：9

共 39 条

[1] Investigations of synthesis mechanisms of ZnO thin films in DC magnetron sputter processes [J].

Abduev, A. ;

Akhmedov, A. ;

Asvarov, A. ;

Abdullaev, A. ;

Sulyanov, S. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) :59-62

[2]

Abduev A., 2011, Journal of Physics: Conference Series, V291, DOI 10.1088/1742-6596/291/1/012039

[3]

Adachi Y., 2013, 2012 MRS FALL M S F, V1494, P133

[4] Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition [J].

Adachi, Yutaka ;

Ohashi, Naoki ;

Ohgaki, Takeshi ;

Ohnishi, Tsuyoshi ;

Sakaguchi, Isao ;

Ueda, Shigenori ;

Yoshikawa, Hideki ;

Kobayashi, Keisuke ;

Williams, Jesse R. ;

Ogino, Tsuyoshi ;

Haneda, Hajime .

THIN SOLID FILMS, 2011, 519 (18) :5875-5881

[5] Effects of a high humidity environment and air anneal treatments on the electrical resistivity of transparent conducting ZnO-based thin films [J].

Asvarov, Abil ;

Abduev, Aslan ;

Akhmedov, Akhmed ;

Abdullaev, Abdulla .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6, 2010, 7 (06) :1553-1555

[6] Highly conductive epitaxial ZnO layers deposited by atomic layer deposition [J].

Baji, Zs. ;

Labadi, Z. ;

Molnar, Gy. ;

Pecz, B. ;

Vad, K. ;

Horvath, Z. E. ;

Szabo, P. J. ;

Nagata, T. ;

Volk, J. .

THIN SOLID FILMS, 2014, 562 :485-489

[7] Effect of Ga Doping Concentration on Electrical and Optical Properties of Nano-ZnO:Ga Transparent Conductive Films [J].

Fang, L. ;

Zhou, K. ;

Wu, F. ;

Huang, Q. L. ;

Yang, X. F. ;

Kong, C. Y. .

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2010, 23 (06) :885-888

[8] Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview [J].

Fraga, M. A. ;

Furlan, H. ;

Pessoa, R. S. ;

Massi, M. .

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2014, 20 (01) :9-21

[9]

Gardeniers J., 1988, J APPL PHYS, V83, P7844

[10] Effect of Oxide buffer layers on the optical and electrical properties of Ga-doped zinc oxide thin film [J].

Gil, Byung Woo ;

Lee, Sung Eui ;

Lee, Hee Chul .

APPLICATIONS OF ENGINEERING MATERIALS, PTS 1-4, 2011, 287-290 :1837-1840

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