Photovoltaic Behaviors in an Isotype n-TiO2/n-Si Heterojunction

被引：5

作者：

Fan Hui-Jie ^{[2
]}

Zhang Hui-Qiang ^{[3
]}

Wu Jing-Jing ^{[2
]}

Wen Zheng-Fang ^{[3
]}

Ma Feng-Ying ^{[1
]}

机构：

[1] Zhengzhou Univ, Sch Phys Engn, Zhengzhou 450001, Peoples R China

[2] Zhengzhou Univ, Affiliated Hosp 1, Zhengzhou 450052, Peoples R China

[3] Xinxiang Med Univ, Xinxiang 453000, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 12期

基金：

中国国家自然科学基金;

关键词：

SOLAR-CELL;

D O I：

10.1088/0256-307X/28/12/127305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An n-TiO2/n-Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n-Si substrates. Obvious photovoltaic behaviors are observed in this isotype heterojunction. The open circuit voltage and short circuit current of the heterojunction can reach 123mV and 20 mu A/cm(2), respectively. The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction. The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.

引用

页数：3

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