4H-SiC avalanche photodiode with multistep junction extension termination

被引：6

作者：

Yan, F

Luo, Y

Zhao, JH

Bush, M

Olsen, GH

Weiner, M

机构：

[1] Rutgers State Univ, Dept ECE, Piscataway, NJ 08854 USA

[2] Sensors Unltd Inc, Princeton, NJ 08540 USA

[3] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 17期

关键词：

D O I：

10.1049/el:20010720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC avalanche photodiodes (APDs) are fabricated with a multistep junction termination extension. The leakage current density has been dramatically reduced to as low as 1 muA/cm(2) and photo-responsitivity up to 10(5) A/W has been achieved. The 4H-SiC APDs can run very stably at power densities up to 10(4) W/cm(2).

引用

页码：1080 / 1081

页数：2

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