Mechanism of Fermi level pinning at metal/germanium interfaces

被引：40

作者：

Kasahara, K. ^{[1
]}

Yamada, S. ^{[1
]}

Sawano, K. ^{[2
]}

Miyao, M. ^{[1
]}

Hamaya, K. ^{[1
,3
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[2] Tokyo City Univ, Adv Res Labs, Tokyo 1580082, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 20期

关键词：

METAL-SEMICONDUCTOR INTERFACES; SCHOTTKY-BARRIER FORMATION; GERMANIUM; ALLOYS; MODEL; GE;

D O I：

10.1103/PhysRevB.84.205301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe3Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/p-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe3Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.

引用

页数：5

共 30 条

[1] Defect levels of dangling bonds in silicon and germanium through hybrid functionals [J].