Performance of Nd:YLF laser by using La3Ga5SiO14 crystal electrooptic Q-switch

被引：6
|
作者：
Zhang, SJ
Wang, QP
Tian, ZB
Yin, X
Zhang, HJ
Li, YC
Li, SC
机构：
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
[3] Tianjin Univ, Coll Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2005年 / 37卷 / 08期
关键词：
Nd : YLF laser; electro-optic Q-switch; La3Ga5SiO14; crystal; optical activity;
D O I：
10.1016/j.optlastec.2004.09.004
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The polarization rotating coefficient and the laser-damage threshold of La3Ga5SiO14 crystal at 1064 nm are measured, which are 1.1 deg/mm and 900 M W/cm(2), respectively. The working principle and the design method of electrooptic Q-switch based on La3Ga5SiO14 crystal, which has the optical activity, are reported. The performance of Nd:YLF laser with the electrooptic Q-switch of La3Ga5SiO14 crystal was studied. The output pulses with an energy of 379mJ, a duration of 8.7ns and repetition of 10Hz are achieved. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：608 / 611
页数：4
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