Simulation and design of junction termination structures for diamond Schottky diodes

被引：9

作者：

Thion, F. ^{[1
,2
,3
]}

Isoird, K. ^{[1
,2
]}

Planson, D. ^{[3
]}

Locatelli, M. -L. ^{[4
,5
]}

Ding, H. ^{[1
,2
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Toulouse, UPS, INSA, INP,ISAE,LAAS, F-31077 Toulouse, France

[3] Univ Lyon, INSA Lyon, CNRS, UMR 5005,Lab AMPERE, F-69621 Villeurbanne, France

[4] Univ Toulouse, UPS, INPT, LAPLACE Lab Plasma & Convers Energie, F-31062 Toulouse 9, France

[5] CNRS, LAPLACE, F-31062 Toulouse, France

来源：

关键词：

Diamond Schottky Diodes; Simulation; Semi-resistive material; Field plate;

D O I：

10.1016/j.diamond.2011.03.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through the collaboration of AMPERE and LAAS laboratories, a study of junction termination structures using field plates and semi-resistive materials was carried out. Several results from simulations of p-type Schottky diodes protected by MESA etching and coated with several layers of dielectric materials are shown in this paper. The analysis of those simulations, conducted on pseudo-vertical diodes protected by a field plate on a semi-resistive layer deposited on top of a dielectric, shows a great efficiency of such junction termination structures. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：729 / 732

页数：4

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