Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

被引：10
|
作者：
Zuo, Zheng-Hu [1 ,2 ]
Zhan, Qing-Feng [1 ,2 ]
Chen, Bin [1 ,2 ]
Yang, Hua-Li [1 ,2 ]
Liu, Yi-Wei [1 ,2 ]
Liu, Lu-Ping [1 ,2 ]
Xie, Ya-Li [1 ,2 ]
Li, Run-Wei [1 ,2 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
来源：
CHINESE PHYSICS B | 2016年 / 25卷 / 08期
基金：
中国国家自然科学基金;
关键词：
antiferroelectric films; freestanding; energy storage; PHASE-TRANSITION; FILMS; HYSTERESIS; CERAMICS; DENSITY;
D O I：
10.1088/1674-1056/25/8/087702
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O-3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm(3) and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm(3) and 67.9%, respectively.
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页数：5
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