A DC model of carbon nanotube field effect transistor for CAD applications

被引：49

作者：

Marani, Roberto ^{[1
]}

Perri, Anna Gina ^{[1
]}

机构：

[1] Politecn Bari, Dipartimento Elettrotecn & Elettron, Bari, Italy

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2012年 / 99卷 / 03期

关键词：

nano-electronic devices; nanotechnology; carbon nanotube field effect transistors; modelling; output and transfer characteristics;

D O I：

10.1080/00207217.2011.629223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct current model of carbon nanotube field effect transistors for computer-aided design applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model available online, obtaining a negligible relative error in both the cases. The proposed model can be easily implemented in an electrical simulator, and the computational time is very short.

引用

页码：437 / 444

页数：8

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