A DC model of carbon nanotube field effect transistor for CAD applications

A direct current model of carbon nanotube field effect transistors for computer-aided design applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model available online, obtaining a negligible relative error in both the cases. The proposed model can be easily implemented in an electrical simulator, and the computational time is very short.