Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

被引：34

作者：

Kim, Kyoungwon ^{[2
,3
]}

Kim, Sangsig ^{[3
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheonju 360764, Chungbuk, South Korea

[2] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[3] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 02期

关键词：

ZnO; Excimer laser; Laser annealing; ZINC-OXIDE;

D O I：

10.1016/j.cap.2011.09.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH3COO)(2)], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (lambda = 248, KrF) source with energy density of 50 mJ/cm(2) for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：585 / 588

页数：4

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