Molecular dynamics simulation for ionized cluster beam deposition

被引:4
作者
Kang, HJ [1 ]
Lee, MW [1 ]
Kim, JH [1 ]
Whang, CN [1 ]
机构
[1] YONSEI UNIV,DEPT PHYS,SEOUL 120749,SOUTH KOREA
关键词
ENERGY;
D O I
10.1016/S0168-583X(96)00559-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The mechanism of ionized cluster beam deposition has been studied using Molecular Dynamics Simulation, The Embedded Atom Method (EAM) potential was used in the simulation. The impact of an Au-95-cluster on a Au(100) substrate was studied for impact energies of 0.15-10 eV/atom. The dependence of the impact energy of the cluster beam was observed. For a cluster energy impact of 10 eV per atom, defects on the surface were created and the cluster embedded into a substrate as an amorphous state. For an energy of 0.5 eV per atom, a defect-free homoepitaxial growth was observed and atomic-scale nucleation was formed, which are in good agreement with experiment. Thus the molecular dynamics simulation is very useful to study the mechanism of ionized cluster beam deposition.
引用
收藏
页码:53 / 57
页数:5
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