A very simple method to measure the input capacitance and the input current of transistors

被引：14

作者：

Fascilla, A

Pessina, G

机构：

[1] Ist Nazl Fis Nucl, I-20133 Milan, Italy

[2] Univ Statale Milano, I-20133 Milan, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 469卷 / 01期

关键词：

low noise; transistors input characterization; transistors input current measurement;

D O I：

10.1016/S0168-9002(01)00791-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We describe a method to measure the gate capacitance and the gate current of transistors at any temperature and at any operating condition. Discrimination between the total input capacitance and transfer reverse capacitance (gate to drain capacitance) is also possible with high accuracy. With this data the optimization of the signal to noise ratio and power dissipation can be achieved in the design of the front-end electronics for nuclear applications. (C) 2001 Elsevier Science BN. All rights reserved.

引用

收藏

页码：116 / 126

页数：11

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