Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

被引：6

作者：

Lechaux, Y. ^{[1
]}

Fadjie-Djomkam, A. B. ^{[1
]}

Bollaert, S. ^{[1
]}

Wichmann, N. ^{[1
]}

机构：

[1] Univ Lille 1, Inst Elect Microelect & Nanotechnol, CNRS UMR 8520, Ave Henri Poincare, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 13期

关键词：

PASSIVATION; AL2O3;

D O I：

10.1063/1.4963656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage (C-V) measurements and x-ray photoelectron spectroscopy (XPS) analysis were performed in order to investigate the effect of a oxygen (O-2) plasma after oxide deposition on the Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor structure passivated with ammonia NH4OH solution. From C-V measurements, an improvement of charge control is observed using the O-2 plasma postoxidation process on In0.53Ga0.47As, while the minimum of interface trap density remains at a good value lower than 1 x 10(12) cm(-2) eV(-1). From XPS measurements, we found that NH4OH passivation removes drastically the Ga and As native oxides on the In0.53Ga0.47As surface and the O-2 plasma postoxidation process enables the reduction of interface re-oxidation after post deposition annealing (PDA) of the oxide. The advanced hypothesis is the formation of interfacial barrier between Al2O3 and In0.53Ga0.47As which prevents the diffusion of oxygen species into the semiconductor surface during PDA. Published by AIP Publishing.

引用

页数：4

共 29 条

[1] Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures [J].

Carter, Andrew D. ;

Mitchell, William J. ;

Thibeault, Brian J. ;

Law, Jeremy J. M. ;

Rodwell, Mark J. W. .

APPLIED PHYSICS EXPRESS, 2011, 4 (09)

[2] Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities [J].

Chobpattana, Varistha ;

Son, Junwoo ;

Law, Jeremy J. M. ;

Engel-Herbert, Roman ;

Huang, Cheng-Ying ;

Stemmer, Susanne .

APPLIED PHYSICS LETTERS, 2013, 102 (02)

[3] Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces [J].

Engel-Herbert, Roman ;

Hwang, Yoontae ;

Stemmer, Susanne .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)

[4] Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors [J].

Galatage, R. V. ;

Dong, H. ;

Zhernokletov, D. M. ;

Brennan, B. ;

Hinkle, C. L. ;

Wallace, R. M. ;

Vogel, E. M. .

APPLIED PHYSICS LETTERS, 2011, 99 (17)

[5]

Goel N., 2008, TECH DIG IEEE INT EL, P1

[6] Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation [J].

Hoshii, Takuya ;

Lee, Sunghoon ;

Suzuki, Rena ;

Taoka, Noriyuki ;

Yokoyama, Masafumi ;

Yamada, Hishashi ;

Hata, Masahiko ;

Yasuda, Tetsuji ;

Takenaka, Mitsuru ;

Takagi, Shinichi .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)

[7] Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs [J].

Hu, Jenny ;

Wong, H. -S. Philip .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (04)

[8] The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System [J].

Hurley, Paul K. ;

O'Connor, Eamon ;

Djara, Vladimir ;

Monaghan, Scott ;

Povey, Ian M. ;

Long, Rathnait D. ;

Sheehan, Brendan ;

Lin, Jun ;

McIntyre, Paul C. ;

Brennan, Barry ;

Wallace, Robert M. ;

Pemble, Martyn E. ;

Cherkaoui, Karim .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (04) :429-443

[9] The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces [J].

Kent, Tyler ;

Tang, Kechao ;

Chobpattana, Varistha ;

Negara, Muhammad Adi ;

Edmonds, Mary ;

Mitchell, William ;

Sahu, Bhagawan ;

Galatage, Rohit ;

Droopad, Ravi ;

McIntyre, Paul ;

Kummel, Andrew C. .

JOURNAL OF CHEMICAL PHYSICS, 2015, 143 (16)

[10] Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals [J].

Kim, Eun Ji ;

Wang, Lingquan ;

Asbeck, Peter M. ;

Saraswat, Krishna C. ;

McIntyre, Paul C. .

APPLIED PHYSICS LETTERS, 2010, 96 (01)

← 1 2 3 →