Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy

被引:25
作者
Klenov, Dmitri O. [2 ]
Zide, Joshua M. O. [1 ,3 ]
机构
[1] Univ Delaware, Newark, DE 19716 USA
[2] FEI Co, NL-5600 KA Eindhoven, Netherlands
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93116 USA
基金
美国国家科学基金会;
关键词
aluminium compounds; III-V semiconductors; indium compounds; interface structure; scanning-transmission electron microscopy; semiconductor epitaxial layers; X-ray chemical analysis;
D O I
10.1063/1.3645632
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth. (C) 2011 American Institute of Physics. [doi:10.1063/1.3645632]
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页数:3
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