Tunable Hot-Electron Transfer Within a Single Core-Shell Nanowire

被引:7
作者
Chen, Guannan [1 ]
Gallo, Eric M. [1 ]
Leaffer, Oren D. [1 ]
McGuckin, Terrence [1 ]
Prete, Paola [2 ]
Lovergine, Nico [3 ]
Spanier, Jonathan E. [1 ]
机构
[1] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] CNR, IMM, Lecce, Italy
[3] Univ Salento, Dept Innovat Engn, Lecce, Italy
关键词
FIELD-EFFECT TRANSISTORS; REAL-SPACE TRANSFER; MONTE-CARLO METHOD; HETEROSTRUCTURES; LASERS; EFFICIENCY; TRANSPORT; DEVICES; GAAS;
D O I
10.1103/PhysRevLett.107.156802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the hot photoexcited electron transfer across the coaxial interface of a cylindrical core-shell nanowire. Modulation of the transfer rates, manifested as a large tunability of the voltage onset of negative differential resistance and of voltage-current phase, is achieved using three different modes. The coupling of electrostatic gating, incident photon energy, and the incident photon intensity to transfer rates is facilitated by the combined influences of geometric confinement and heterojunction shape on hot-electron transfer, and by electron-electron scattering rates that can be altered by varying the incident photon flux, with evidence of weak electron-phonon scattering. Dynamic manipulation of this transfer rate permits the introduction and control of a continuously adjustable phase delay of up to similar to 130 degrees within a single nanometer-scale device element.
引用
收藏
页数:5
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共 34 条
  • [1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [2] COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS/INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES
    BELENKY, GL
    GARBINSKI, PA
    LURYI, S
    MASTRAPASQUA, M
    CHO, AY
    HAMM, RA
    HAYES, TR
    LASKOWSKI, EJ
    SIVCO, DL
    SMITH, PR
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8618 - 8627
  • [3] Cao LY, 2009, NAT MATER, V8, P643, DOI [10.1038/nmat2477, 10.1038/NMAT2477]
  • [4] Enhanced raman scattering from individual semiconductor nanocones and nanowires
    Cao, LY
    Nabet, B
    Spanier, JE
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (15)
  • [5] On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
    Chen, Guannan
    Gallo, Eric M.
    Burger, Joan
    Nabet, Bahram
    Cola, Adriano
    Prete, Paola
    Lovergine, Nico
    Spanier, Jonathan E.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (22)
  • [6] A highly efficient single-photon source based on a quantum dot in a photonic nanowire
    Claudon, Julien
    Bleuse, Joel
    Malik, Nitin Singh
    Bazin, Maela
    Jaffrennou, Perine
    Gregersen, Niels
    Sauvan, Christophe
    Lalanne, Philippe
    Gerard, Jean-Michel
    [J]. NATURE PHOTONICS, 2010, 4 (03) : 174 - 177
  • [7] Impact of surfaces on the optical properties of GaAs nanowires
    Demichel, O.
    Heiss, M.
    Bleuse, J.
    Mariette, H.
    Fontcuberta i Morral, A.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (20)
  • [8] Single-nanowire electrically driven lasers
    Duan, XF
    Huang, Y
    Agarwal, R
    Lieber, CM
    [J]. NATURE, 2003, 421 (6920) : 241 - 245
  • [9] Extremely Efficient Multiple Electron-Hole Pair Generation in Carbon Nanotube Photodiodes
    Gabor, Nathaniel M.
    Zhong, Zhaohui
    Bosnick, Ken
    Park, Jiwoong
    McEuen, Paul L.
    [J]. SCIENCE, 2009, 325 (5946) : 1367 - 1371
  • [10] Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors
    Gallo, Eric M.
    Chen, Guannan
    Currie, Marc
    McGuckin, Terrence
    Prete, Paola
    Lovergine, Nico
    Nabet, Bahram
    Spanier, Jonathan E.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (24)