Power conversion efficiency of 25.26% for silicon heterojunction solar cell with transition metal element doped indium oxide transparent conductive film as front electrode

被引：29
作者：
Dong, Gangqiang [1 ]
Sang, Jiacheng [2 ]
Peng, Chen-Wei [1 ]
Liu, Fengzhen [2 ]
Zhou, Yurong [2 ]
Yu, Cao [1 ]
机构：
[1] Suzhou Maxwell Technol Co Ltd, Suzhou, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, 19A Yuquan Rd, Beijing 100049, Peoples R China
来源：
PROGRESS IN PHOTOVOLTAICS | 2022年 / 30卷 / 09期
关键词：
power conversion efficiency; short circuit current density; silicon heterojunction; transition metal elements; transparent conductive oxide; PULSED-LASER DEPOSITION; ITO THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; BEAM EVAPORATION; HYDROGEN; TEMPERATURE; DEPENDENCE; THICKNESS; IN2O3;
D O I：
10.1002/pip.3565
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, to improve the power conversion efficiency (E-ff) of silicon heterojunction (SHJ) solar cells, we developed the indium oxide doped with transition metal elements (IMO) as front transparent conductive oxide (TCO) layer combined with microcrystalline silicon (mu-Si:H(n(+))) for SHJ solar cell. The optical and electrical properties as well as structures of hydrogenated IMO (IMO:H) films were studied and compared to conventional indium tin oxide (ITO) film. Such IMO:H films have high carrier mobility over 70 cm(2)/V center dot s, high transmittance, and low free carrier absorption, which leads to a high short circuit current density exceeding 40 mA/cm(2). In addition, the low sheet resistance and contact resistivity of the IMO:H films contribute to the high fill factor of the solar cell. The average E-ff of solar cells with IMO:H + mu-Si:H(n(+)) is improved by 0.4% compared with that of the solar cells with ITO + a-Si:H(n(+)). Finally, a certified efficiency up to 25.26% (total area, 274.5 cm(2)) was achieved.
引用
收藏
页码：1136 / 1143
页数：8
相关论文
共 32 条
[1]   Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency [J].
Adachi, Daisuke ;
Hernandez, Jose Luis ;
Yamamoto, Kenji .
APPLIED PHYSICS LETTERS, 2015, 107 (23)
[2]   The effects of various annealing regimes on the microstructure and physical properties of ITO (In2O3:Sn) thin films deposited by electron beam evaporation for solar energy applications [J].
Alves Cardoso Diniz, Antonia Sonia .
RENEWABLE ENERGY, 2011, 36 (04) :1153-1165
[3]   Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells [J].
Barraud, L. ;
Holman, Z. C. ;
Badel, N. ;
Reiss, P. ;
Descoeudres, A. ;
Battaglia, C. ;
De Wolf, S. ;
Ballif, C. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 115 :151-156
[4]   Intrinsic limit of electrical properties of transparent conductive oxide films [J].
Chen, M ;
Pei, ZL ;
Wang, X ;
Yu, YH ;
Liu, XH ;
Sun, C ;
Wen, LS .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (20) :2538-2548
[5]   OHMIC CONTACTS FOR GAAS DEVICES [J].
COX, RH ;
STRACK, H .
SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+
[6]   Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates-dependence on oxygen partial pressure [J].
de Carvalho, CN ;
Lavareda, G ;
Fortunato, E ;
Amaral, A .
THIN SOLID FILMS, 2003, 427 (1-2) :215-218
[7]   Effect of rf power on the properties of ITO thin films deposited by plasma enhanced reactive thermal evaporation on unheated polymer substrates [J].
Nunes de Carvalho, C. ;
Luis, A. ;
Conde, O. ;
Fortunato, E. ;
Lavareda, G. ;
Amaral, A. .
Journal of Non-Crystalline Solids, 2002, 299-302 :1208-1212
[8]  
Dong GQ, 2018, WORL CON PHOTOVOLT E, P2121, DOI 10.1109/PVSC.2018.8548034
[9]   Thickness dependence of structural and optical properties of indium tin oxide nanofiber thin films prepared by electron beam evaporation onto quartz substrates [J].
El-Nahass, M. M. ;
El-Menyawy, E. M. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (02) :145-150
[10]   Investigation of In2O3:SnO2 films with different doping ratio and application as transparent conducting electrode in silicon heterojunction solar cell [J].
Gong, Wenbo ;
Wang, Guanghong ;
Gong, Yuanbo ;
Zhao, Lei ;
Mo, Libin ;
Diao, Hongwei ;
Tian, Hongbo ;
Wang, Wei ;
Zong, Jun ;
Wang, Wenjing .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2022, 234
1234