Design of compact highly matched broadband balanced low-noise amplifier at X-band using CRLH transmission lines

被引:1
|
作者
Mojtaba, S. [1 ]
Hoseini, S. Najjar [1 ]
Zaker, Reza [1 ]
机构
[1] Azarbaijan Shahid Madani Univ, Elect Engn Dept, Tabriz, Iran
关键词
balanced LNA; compact receiver; composite right; left-handed; HJFET; low-noise amplifier; X-band;
D O I
10.1002/mmce.23315
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
This article presents broadband balanced low-noise amplifier (LNA) operating at X-band, which uses composite right/left-handed (CRLH) transmission lines as input-output matching networks. Proposed LNA eliminates lumped DC-blocking capacitors and is combined with a hybrid coupler to achieve better stability and matching. Presented CRLH matching technique enhances the matching quality, reduces the overall size and considerably improves the bandwidth and noise performance. The matrix analysis of the CRLH structure is provided to determine the exact dimension of microstrip lines for the highest stable gain and the lowest noise figure (NF). The LNA structure uses a HJFET technology as an active device, which is simulated using an ADS momentum and small-signal scattering parameters provided by the manufacturer. This LNA offers an improved impedance matching and measured the 20 dB S-11 band-width of 16% (8.3-9.7GHz), which is in good agreement with simulation. Total area occupied by the fabricated LNA is only 1.7 lambda 0x0.9 lambda 0$$ 1.7{\lambda}_0\times 0.9{\lambda}_0 $$@ 8.3GHz. The LNA also provides <1.8 dB NF based on the IEEE standard temperature (16.85 Celsius), and 1 dB gain flatness throughout the entire band along with a 1 dB compression point of -1 dBm and an output third point intercept point of 19.5 dBm. The proposed CRLH-based LNA can be a good candidate for compact receivers and sensors.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Design of X-band Low Noise Amplifier Using GaAs Technology
    Yang, Bochao
    Zhang, Yu
    Xia, Minfeng
    Zhang, Shibin
    Zhang, Zhizheng
    2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT, 2024,
  • [2] X-band low noise amplifier using SiGeBiCMOS technology
    Patel, VJ
    Axtell, HS
    Cerny, CL
    Creech, GL
    Drangmeister, RG
    Gouker, MA
    James, TL
    Mattamana, AG
    Mbuko, IO
    Neidhard, RA
    Nykiel, EB
    Orlando, PL
    Selke, DL
    Wiedemann, JM
    Quach, TK
    2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 49 - 52
  • [3] A Packaged X-Band Low Noise Amplifier
    Snir, Nadav
    Bar-Helmer, Noam
    Pasternak, Roman
    Regev, Dror
    IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (COMCAS 2009), 2009,
  • [4] A SiGe BiCMOS Bypass Low-Noise Amplifier for X-Band Phased Array RADARs
    Turkmen, Esref
    Burak, Abdurrahman
    Caliskan, Can
    Kalyoncu, Ilker
    Gurbuz, Yasar
    2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 222 - 224
  • [5] A Two Stage Variable-Gain Low-Noise Amplifier for X-Band in 0.18 Aμm CMOS
    Nikbakhsh, Mohammad Reza
    Abiri, Ebrahim
    Ghasemian, Hossein
    Salehi, Mohammad Reza
    WIRELESS PERSONAL COMMUNICATIONS, 2018, 98 (01) : 173 - 187
  • [6] A Two Stage Variable-Gain Low-Noise Amplifier for X-Band in 0.18 µm CMOS
    Mohammad Reza Nikbakhsh
    Ebrahim Abiri
    Hossein Ghasemian
    Mohammad Reza Salehi
    Wireless Personal Communications, 2018, 98 : 173 - 187
  • [7] The Design of SiGe HBT Balanced Broadband Low Noise Amplifier
    Wang Zi-xu
    Yang Wei-ming
    Peng Ju-hong
    Chen Jian-xin
    Me Wan-bo
    Shi Chen
    2008 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, VOLS 1-4, 2008, : 233 - +
  • [8] Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band
    Farhad Bahadori-Jahromi
    Seyyed Jafar Zareian-Jahromi
    Wireless Personal Communications, 2018, 103 : 2679 - 2692
  • [9] Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band
    Bahadori-Jahromi, Farhad
    Zareian-Jahromi, Seyyed Jafar
    WIRELESS PERSONAL COMMUNICATIONS, 2018, 103 (03) : 2679 - 2692
  • [10] A low-power, X-band SiGe HBT low-noise amplifier for near-space radar applications
    Kuo, Wei-Min Lance
    Krithivasan, Ramkumar
    Li, Xiangtao
    Lu, Yuan
    Cressler, John D.
    Gustat, Hans
    Heinemann, Bernd
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (09) : 520 - 522