Light confinement and absorption in metal-semiconductor-metal nanostructures

被引：1

作者：

Collin, S ^{[1
]}

Pardo, F ^{[1
]}

Teissier, R ^{[1
]}

Bardou, N ^{[1
]}

Dupuis, C ^{[1
]}

Mahe, R ^{[1
]}

Ferlazzo, L ^{[1
]}

Cambril, E ^{[1
]}

Thierry-Mieg, W ^{[1
]}

Lemaître, A ^{[1
]}

Pelouard, JL ^{[1
]}

机构：

[1] CNRS, LPN, F-91460 Marcoussis, France

来源：

QUANTUM DOTS, NANOPARTICLES, AND NONOCLUSTERS II | 2005年 / 5734卷

关键词：

metallic nanostructures; light confinement; metal-semiconducteur-metal; photodetector; surface-plasmon; grating;

D O I：

10.1117/12.597202

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

New concepts for efficient light absorption in nanoscale metal-semiconductor-metal photodetectors are analyzed from both theoretical and experimental point of view. They are based on sub-wavelength metallic gratings which allows light confinement in tiny volumes (< 100 nm) close to electrodes (< 100 nm). Two photodetector structures are proposed: (i) a resonant-cavity-enhanced subwavelength metal-semiconductor-metal photodetector, and (ii) a nanoscale metal-semiconductor grating photodetector. External quantum efficiency as high as 9% has been obtained in 40 x 100 nm(2) cross-section GaAs wires, limited by fabrication technology. These results show promising features for highly efficient and ultrafast photodetectors.

引用

页码：1 / 12

页数：12

共 33 条

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