Effect of cesium fluoride treatment in bifacial Cu(In1-x,Gax)Se2 solar cell

被引:1
作者
Khatri, Ishwor [1 ]
Yashiro, Takahiko [2 ]
Sugiyama, Mutsumi [1 ,2 ]
机构
[1] Tokyo Univ Sci, Res Inst Sci & Technol, 2641 Yamazaki, Noda, Chiba 2788510, Japan
[2] Tokyo Univ Sci, Fac Sci & Technol, 2641 Yamazaki, Noda, Chiba 2788510, Japan
基金
日本学术振兴会;
关键词
Copper indium gallium selenide; Bifacial solar cell; Titanium-doped indium oxide; Cesium treatment; Heavy alkali metal; CONDUCTING OXIDE BACK; CU(IN; GA)SE-2; THIN-FILMS; HEAT-BIAS SOAKING; POSTDEPOSITION TREATMENT; ELECTRICAL-PROPERTIES;
D O I
10.1016/j.tsf.2021.138913
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bifacial Cu(In1-x,Ga-x)Se-2 (CIGS) thin film solar cells were fabricated on titanium-doped indium oxide (ITiO) coated soda-lime glass substrate, and the effect of cesium fluoride (CsF) treatment on solar cell performance was investigated. CsF treatment improved the photovoltaic properties of CIGS/ITiO-based solar cells not only under front-side illumination but also under rear-side illumination. The quantum efficiency for rear-side illumination improved significantly in CsF-treated CIGS solar cells. As a result, the bifaciality improved in the CsF-treated CIGS solar cell. ITiO exhibited good contact with the CIGS thin film, regardless of Cs incorporation. In addition, the effect of heat-light soaking treatment was also investigated in CIGS/ITiO-based solar cells.
引用
收藏
页数:8
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