Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

被引：11

作者：

Zhang, Panfeng ^{[1
]}

Wei, Hongyuan ^{[1
]}

Cong, Guangwei ^{[1
]}

Hu, Weiguo ^{[1
]}

Fan, Haibo ^{[1
]}

Wu, JieJun ^{[1
]}

Zhu, Qinsheng ^{[1
]}

Liu, Xianglin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 06期

基金：

中国国家自然科学基金;

关键词：

X-ray diffraction; metal-organic chemical vapor deposition; zinc oxide; structural properties;

D O I：

10.1016/j.tsf.2007.05.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO films were grown at low pressure in a vertical metal-organic vapor deposition (MOCVD) reactor with a rotating disk. The structural and morphological properties of the ZnO films grown at different disk rotation rate (DRR) were investigated. The growth rate increases with the increase of DRR. The ZnO film grown at the DRR of 450 revolutions per minute (rpm) has the lowest X-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. In addition, the crystalline quality and morphology are improved as the DRR increased but both are degraded when the DRR is higher than 450 rpm. These results can help improve in understanding the rotation effects on the ZnO films grown by MOCVD. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：925 / 928

页数：4

共 24 条

[11] Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy [J].

Ko, HJ ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Kobayashi, I ;

Uchiki, H .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1905-1907

[12] On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters [J].

Mitrovic, B ;

Gurary, A ;

Kadinski, L .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :656-663

[13] Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy [J].

Ogata, K ;

Maejima, K ;

Fujita, S ;

Fujita, S .

JOURNAL OF CRYSTAL GROWTH, 2003, 248 :25-30

[14] Influence of VI:II ratio on the properties of MOCVD-grown ZnO thin films [J].

Pagni, O ;

Leitch, AWR .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (10) :2213-2218

[15] Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition [J].

Park, WI ;

Yi, GC .

JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (10) :L32-L35

[16] ZnO films grown under the oxygen-rich condition [J].

Sekiguchi, T ;

Haga, K ;

Inaba, K .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :68-71

[17] ZNO GREEN LIGHT-EMITTING DIODE [J].

SHIMIZU, A ;

KANBARA, M ;

HADA, M ;

KASUGA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) :1435-1436

[18] Epitaxial growth of ZnO films on si(111) [J].

Tiwari, A ;

Park, M ;

Jin, C ;

Wang, H ;

Kumar, D ;

Narayan, J .

JOURNAL OF MATERIALS RESEARCH, 2002, 17 (10) :2480-2483

[19] Epitaxial growth of ZnO films [J].

Triboulet, R ;

Perrière, J .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2003, 47 (2-3) :65-138

[20] ZnO quantum particle thin films fabricated by electrophoretic deposition [J].

Wong, EM ;

Searson, PC .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2939-2941

← 1 2 3 →