Effect of filament and substrate temperatures on the structural and electrical properties of SiC thin films grown by the HWCVD technique

被引：37

作者：

Dasgupta, A. ^{[1
]}

Huang, Y. ^{[1
]}

Houben, L. ^{[2
]}

Klein, S. ^{[1
]}

Finger, F. ^{[1
]}

Carius, R. ^{[1
]}

Luysberg, M. ^{[2
]}

机构：

[1] Forschungszentrum Julich, Inst Photovolta, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

关键词：

silicon carbide; hot-wire deposition; microstructure; Raman spectroscopy; electron microscopy;

D O I：

10.1016/j.tsf.2007.06.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of varying filament and substrate temperatures on the structure and electrical conductivity of crystalline SiC films prepared by HWCVD technique are described in this paper. At a constant filament temperature, the electrical conductivity of the SiC films increases with increasing substrate temperature. However, TEM studies show that there is no change in the size of the SiC columnar grains. On the other hand, a significant variation in filament temperature at constant substrate temperature leads to a variation of structure and conductivity. Raman spectroscopy and TEM studies reveal that crystallinity improves with increase in filament temperature. Furthermore, a mu c-Si phase exists alongside SiC at low filament temperature (1750 degrees C). (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：622 / 625

页数：4

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