An S-band 34dBm Stacked-HBT Phase Driver in 0.25 μm BiCMOS Technology for GaN-Based Phased-Array Radar Transmit Chain

被引：0
作者：
Essing, J. [1 ]
Bossuet, A. [1 ]
Knight, R. [1 ]
Hek, A. P. de [1 ]
van Vliet, F. E. [1 ]
机构：
[1] TNO, The Hague, Netherlands
来源：
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年
关键词：
power amplifier; phase shifter; SiGe BiCMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes an integrated S-band phase-shifter driver-amplifier to drive Gallium-Nitride (GaN) based power amplifiers in a phased-array radar transmit chain. This phase driver is implemented in a 0.25 mu m SiGe BiCMOS process and packaged into a QFN5x5. By using device stacking, the phase driver achieves an output power of more than 32.5dBm (1.7W) across the band (2.6-3.4GHz), with a maximum of 34.2dBm (2.7W). The RMS phase error is less than 3.75 degrees at a 6-bit phase resolution. This enables a low-cost highly-integrated transmitter front-end for phased-array radar applications.
引用
收藏
页码：293 / 296
页数：4
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