Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

被引：163

作者：

Song, Can-Li ^{[1
,2
]}

Wang, Yi-Lin ^{[1
]}

Jiang, Ye-Ping ^{[1
,2
]}

Zhang, Yi ^{[1
]}

Chang, Cui-Zu ^{[1
,2
]}

Wang, Lili ^{[1
]}

He, Ke ^{[1
]}

Chen, Xi ^{[2
]}

Jia, Jin-Feng ^{[2
]}

Wang, Yayu ^{[2
]}

Fang, Zhong ^{[1
]}

Dai, Xi ^{[1
]}

Xie, Xin-Cheng ^{[1
]}

Qi, Xiao-Liang ^{[3
]}

Zhang, Shou-Cheng ^{[3
]}

Xue, Qi-Kun ^{[1
,2
]}

Ma, Xucun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 14期

基金：

美国国家科学基金会;

关键词：

SINGLE DIRAC CONE; BI2TE3;

D O I：

10.1063/1.3494595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0 +/- 0.2X10(11)/cm(2), and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494595]

引用

页数：3

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