Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

被引：0

作者：

Liang, S. ^{[1
]}

Zhu, H. L. ^{[1
]}

Zhou, J. T. ^{[1
]}

Cheng, Y. B. ^{[1
]}

Pan, J. Q. ^{[1
]}

Zhao, L. J. ^{[1
]}

Wang, W. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON BIOPHOTONICS, NANOPHOTONICS AND METAMATERIALS | 2006年

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D O I：

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中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.

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页码：302 / +

页数：2

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