Buried air gap structure for improving the breakdown voltage of SOI power MOSFET's

被引：0

作者：

Jeon, BC ^{[1
]}

Kim, DY ^{[1
]}

Lee, YS ^{[1
]}

Oh, JK ^{[1
]}

Han, MK ^{[1
]}

Choi, YI ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Kwanak Ku, Seoul 151742, South Korea

来源：

IPEMC 2000: THIRD INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, PROCEEDINGS | 2000年

关键词：

SOI Power MOSFET; buried air gap structure; breakdown voltage;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel SOI Power MOSFET employing Buried Air Cap Structure (BAGS) is proposed and verified by numerical simulation. Higher breakdown voltage is achieved in proposed structure than conventional ones, because buried air gap reduces the vertical electric field near the drain junction efficiently It is shown that the drain-substrate capacitance is reduced due to the low dielectric constant of the buried air gap.

引用

页码：1061 / 1063

页数：3

共 6 条

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[5] Measurement of the breakdown voltage of lateral power metal-oxide-semiconductor field-effect-transistors on a silicon-on-insulator film with varying the surface design around the gate region [J].

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[6]

WONDEROCK W, 1993, P ISPSD 93, P278

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