Origin of series resistances iN a-Si:H TFTs

被引：28

作者：

Chen, CY ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Ctr Display Technol & Mfg, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 05期

关键词：

D O I：

10.1016/S0038-1101(97)00188-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origin of source/drain series resistances in amorphous silicon (a:Si:H) thin-film transistors (TFT) is analyzed based on a two-dimensional simulation of a-Si:H TFT and gated-four-probe (GFP) a-Si:H TFT structures. The source/drain series resistances consist of the contact resistances between source/drain electrodes and n(+) a-Si:H film, n(+) a-Si:H film resistances, intrinsic a-Si:H bulk resistances, and the geometrical resistances associated with the source/drain-gate overlaps. The influence of each component of series resistances on a-Si:H TFT electrical performance is clearly described based on the results of two-dimensional simulation. Published by Elsevier Science Ltd.

引用

页码：705 / 713

页数：9

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