Low-temperature growth of p-type ZnO thin films via plasma-assisted MOCVD

被引：6

作者：

Lu, Yang-Fan ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

Zeng, Yu-Jia ^{[1
]}

He, Hai-Ping ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

CHEMICAL VAPOR DEPOSITION | 2007年 / 13卷 / 6-7期

关键词：

MOLECULAR-BEAM EPITAXY; SAPPHIRE; DOPANT;

D O I：

10.1002/cvde.200604246

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The p-type ZnO thin films were grown at the low temperature of 250°C using plasma assisted metal-organic chemical vapor deposition (MOCVD), using NO or N2O plasma. It is found that N-doping produces tensile stress and degradation of the crystalline quality to some extent in ZnO thin films. Both ZnO:NO and ZnO:N2O films are p-type and that ZnO:NO film gives a resistivity two orders magnitude lower than that of ZnO:N2O. The study also indicates that an increase in the RF power would not help to improve the properties of the ZnO films. The photoluminescence (PL) measurement of ZnO:NO films at room temperature shows strong UV emission and weak visible emission that is related to defects. The ZnO films show highly (0002) oriented and homogeneous p-type conduction, and also good optical properties with intense UV emission.

引用

页码：295 / +

页数：4

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