Surfactant-free stable SnS2 nanoparticles dispersion for deposition of device-quality films

被引:12
作者
Haghighi, Maryam [1 ]
Tajabadi, Fariba [2 ]
Mandavi, Seyed Mohammad [1 ,3 ]
Mohammadpour, Raheleh [1 ]
Taghavini, Nima [1 ,3 ]
机构
[1] Sharif Univ Technol, Inst Nanosci & Nanotechnol, Tehran 1458889694, Iran
[2] Mat & Energy Res Ctr, Dept Nanotechnol & Adv Mat, Karaj 31787316, Iran
[3] Sharif Univ Technol, Phys Dept, Tehran 1458889694, Iran
关键词
SnS2 thin film; Buffer layer; Two dimensional structures; Surfactant-free dispersion; Dimethylformamide; Copper indium gallium sulfo-selenide solar cells; PHOTOCATALYTIC ACTIVITY; BAND-STRUCTURE; METAL SULFIDE; LITHIUM; NANOSTRUCTURES; DEGRADATION; COMPOSITES; BEHAVIOR; GROWTH; GREEN;
D O I
10.1016/j.tsf.2018.11.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin sulfide (SnS2) has recently attracted considerable attention due to its layered structure that may form two dimensional morphologies. It is an n-type semiconductor with band gap and electron affinity similar to CdS and In2S3; therefore can be regarded as an alternative for these materials in thin film solar cells. Here, we synthesis of SnS2 nanoparticles with different morphology in different ratio of water-ethanol mixed solution by solvothermal method, and observe that more ethanol leads to large sheet like morphologies, while water based synthesis results in very small nanosheets. A challenge in wet deposition of device-quality thin films of SnS2 is the requirement for highly dispersed particles/sheets. We found highly polar dimethylformamide (DMF) as the right dispersing medium, yielding highly stable dispersions. Very uniform nanocrystalline thin films with [001] preferred orientation and good adhesion to substrate are simply deposited by drop casting and spin coating a 0.5 wt% DMF sol of SnS2 at 2000 rpm for 1 min. Electron affinity and band gap of the films are 4.33 eV and 2.27 eV, which is well aligned for copper indium gallium sulfo-selenide (CIGS) solar cells.
引用
收藏
页码:269 / 274
页数:6
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