Temperature dependent growth and optical properties of SnO2 nanowires and nanobelts

被引：25

作者：

Mondal, S. P. ^{[1
]}

Ray, S. K. ^{[1
]}

Ravichandran, J. ^{[2
]}

Manna, I. ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Dept Met & Mat Engn, Kharagpur 721302, W Bengal, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2010年 / 33卷 / 04期

关键词：

SnO2; nanostructures; growth mechanism; optical properties; GAS SENSORS; SINGLE; PHOTOLUMINESCENCE; MECHANISM; OXIDE; RAMAN;

D O I：

10.1007/s12034-010-0054-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnO2 nanowires and nanobelts have been grown by the thermal evaporation of Sn powders. The growth of nanowires and nanobelts has been investigated at different temperatures (750-1000A degrees C). The field emission scanning electron microscopic and transmission electron microscopic studies revealed the growth of nanowires and nano-belts at different growth temperatures. The growth mechanisms of the formation of the nanostructures have also been discussed. X-ray diffraction patterns showed that the nanowires and nanobelts are highly crystalline with tetragonal rutile phase. UV-visible absorption spectrum showed the bulk bandgap value (similar to 3-6 eV) of SnO2. Photoluminescence spectra demonstrated a Stokes-shifted emission in the wavelength range 558-588 nm. The Raman and Fourier transform infrared spectra revealed the formation of stoichiometric SnO2 at different growth temperatures.

引用

页码：357 / 364

页数：8

共 36 条

[1] Infrared studies on SnO2 and Pd/SnO2 [J].

Amalric-Popescu, D ;

Bozon-Verduraz, F .

CATALYSIS TODAY, 2001, 70 (1-3) :139-154

[2] Grain size effects on H-2 gas sensitivity of thick film resistor using SnO2 nanoparticles [J].

Ansari, SG ;

Boroojerdian, P ;

Sainkar, SR ;

Karekar, RN ;

Aiyer, RC ;

Kulkarni, SK .

THIN SOLID FILMS, 1997, 295 (1-2) :271-276

[3] Thermodynamic argument about SnO2 nanoribbon growth [J].

Beltrán, A ;

Andrés, J ;

Longo, E ;

Leite, ER .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :635-637

[4] Morphological, structural and optical study of quasi-1D SnO2 nanowires and nanobelts [J].

Calestani, D ;

Lazzarini, L ;

Salviati, G ;

Zha, M .

CRYSTAL RESEARCH AND TECHNOLOGY, 2005, 40 (10-11) :937-941

[5] Photosensitivity activation of SnO2 thin film gas sensors at room temperature [J].

Camagni, P ;

Faglia, G ;

Galinetto, P ;

Perego, C ;

Samoggia, G ;

Sberveglieri, G .

SENSORS AND ACTUATORS B-CHEMICAL, 1996, 31 (1-2) :99-103

[6] Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts [J].

Comini, E ;

Faglia, G ;

Sberveglieri, G ;

Pan, ZW ;

Wang, ZL .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1869-1871

[7] Ultra-long single crystalline nanoribbons of tin oxide [J].

Dai, ZR ;

Pan, ZW ;

Wang, ZL .

SOLID STATE COMMUNICATIONS, 2001, 118 (07) :351-354

[8] Fully transparent thin-film transistor devices based on SnO2 nanowires [J].

Dattoli, Eric N. ;

Wan, Qing ;

Guo, Wei ;

Chen, Yanbin ;

Pan, Xiaoqing ;

Lu, Wei .

NANO LETTERS, 2007, 7 (08) :2463-2469

[9] Single crystal SnO2 zigzag nanobelts [J].

Duan, JH ;

Yang, SG ;

Liu, HW ;

Gong, JF ;

Huang, HB ;

Zhao, XN ;

Zhang, R ;

Du, YW .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (17) :6180-6181

[10] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

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