Effects of p-doping and nonradiative processes on the current-voltage characteristics of long wavelength quantum-well laser diodes

This article presents a model that combines a pair of simplified Fermi functions and an electrical derivative technique to study the effects of the following on the ideality factor of lattice-matched long wavelength InGaAsP/InP quantum-well laser diodes: the p-doping concentration level, the nonradiative recombination process (n(0.52)) within the active region, the Auger recombination process, and the drift carriers leakage process. The model showed that the ideality factor increases with the p-doping level. It also showed that the traditional three terms recombination model was inadequate for predicting the change in ideality factor with respect to variation in doping level. (C) 1998 American Institute of Physics. [S0021-8979(98)07020-0].