Role of growth pressure on Structural, optical and electrical properties of indium Nitride thin films prepared by modified activated reactive evaporation

The effect of deposition conditions on the crystal structure and optical and electrical properties of Indium Nitride (InN) films deposited by modified reactive evaporation have been investigated. Substrates are kept at the electrode and thereby subjected to low-energy nitrogen ion bombardment. The effects of pressure on the structural, morphological, and optical properties of the films on Si (100) and glass substrates are investigated by X-ray diffraction analysis, scanning electron microscopy, energy-dispersive Xray analysis, and UV-Vis transmittance, Photoluminescence, and Raman spectroscopy. All the films show a preferential c-axis orientation with c- lattice constant found decreasing up to 8 mTorr. The bandgap measured from the photoluminescence and optical absorption method shows similar characteristics. Raman spectra reveal broad and asymmetric line shapes for E2 (high) and A1(LO) modes due to the small phonon correlation length. The Indium oxide phase was detected for the film grown at 25 mTorr which also deteriorates its electrical and optical properties.Copyright (c) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of scientific committee of the International Conference on Advanced Materials and Mechanical Characterization (ICAMMC 2021).