High performance, large area, uncooled detectors for mid-infrared wavelengths

被引：5

作者：

Crowder, JG ^{[1
]}

Elliott, CT

Hardaway, HR

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

[3] Edinburgh Semicond Photon, Livingston EH54 7DQ, Scotland

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 02期

关键词：

Electric impedance measurement - Heterojunctions - Semiconducting indium compounds - Semiconductor diodes - Signal to noise ratio;

D O I：

10.1049/el:20010072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demonstration of D-* in excess of 2 x 10(9)cmHz(1/2)W(-1) from 1 mm diameter, uncooled, semiconductor diode detectors with a pak wavelength response at 5 mum is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.

引用

页码：116 / 118

页数：3