High throughput transfer technique: Save your graphene

被引：30

作者：

Kireev, D. ^{[1
]}

Sarik, D. ^{[1
]}

Wu, T. ^{[2
]}

Xie, X. ^{[2
]}

Wolfrum, B. ^{[1
,3
,4
]}

Offenhaeusser, A. ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Bioelect PGI ICS 8 8, D-52425 Julich, Germany

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China

[3] TUM, IMETUM, Neuroelect, Munich, Germany

[4] BCCN Munich, Boltzmannstr 11, D-85748 Garching, Germany

来源：

CARBON | 2016年 / 107卷

关键词：

SINGLE-CRYSTAL GRAPHENE; GROWTH; BIOLOGY; COPPER; FOILS;

D O I：

10.1016/j.carbon.2016.05.058

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The development rate of graphene-related research is tremendous. New methods of graphene growth and transfer are reported on a regular basis, trending towards large-scale. Nevertheless, the fabrication of high-yield and low-cost graphene devices is still challenging. In this work, we approach this problem from a technological point of view and propose a new, so-called "high-throughput transfer technique". The technique allows a semi-automatic transfer of graphene films right at the desired places on a wafer. We demonstrate the applicability of our method by aligning 52 graphene devices on a 4-inch wafer using only 4 cm(2) of graphene. The overall yield of this process is over 90%. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：319 / 324

页数：6

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