Locally grown Cu(In,Ga)Se2 micro islands for concentrator solar cells

被引:6
作者
Schmid, M. [1 ,2 ,3 ]
Heidmann, B. [1 ,2 ,3 ]
Ringleb, F. [4 ]
Eylers, K. [4 ]
Ernst, O. [4 ]
Andree, S. [5 ]
Bonse, J. [5 ]
Boeck, T. [4 ]
Krueger, J. [5 ]
机构
[1] Univ Duisburg Essen, Lotharstr 1, D-47057 Duisburg, Germany
[2] CENIDE, Fac Phys, Lotharstr 1, D-47057 Duisburg, Germany
[3] Helmholtz Zentrum Berlin Mat & Energie, Dept Renewable Energy, Hahn Meitner Pl 1, D-14109 Berlin, Germany
[4] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany
[5] Bundesanstalt Mat Forsch & Prufung, Unter Eichen 87, D-12205 Berlin, Germany
来源
PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VII | 2018年 / 10527卷
关键词
local growth; self-assembly; fs-laser patterning; laser-induced forward transfer; chalcopyrite; Cu(In; Ga)Se-2; micro solar cell; light concentration;
D O I
10.1117/12.2288253
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se-2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se-2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration.
引用
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页数:9
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