Synthesis and materials properties of transparent conducting In2O3 films prepared by sol-gel-spin coating technique

被引：37

作者：

Savarimuthu, E.

Lalithambika, K. C.

Raj, A. Moses Ezhil

Nehru, L. C.

Ramamurthy, S.

Thayumanavan, A.

Sanjeeviraja, C.

Jayachandran, M. ^{[1
]}

机构：

[1] Cent Electrochem Res Inst, ECMS Div, Karaikkudi 630006, Tamil Nadu, India

[2] Gandhigram Rural Inst Deemed Univ, Dept Phys, Gandhigram 624302, India

[3] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[4] Scott Christian Coll, Dept Phys, Nagercoil 629003, India

[5] SASTRA Univ, Dept Phys, Thirumalai Samudram 613402, India

[6] AVVM Sri Pushpam Coll, Poondy 613503, India

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2007年 / 68卷 / 07期

关键词：

thin films; X-ray diffraction;

D O I：

10.1016/j.jpcs.2007.02.038

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Transparent conducting indium oxide (In2O3) thin films have been prepared on glass substrates by the simple sol-gel-spin coating technique. These films have been characterized by X-ray diffraction, resistivity and Hall effect measurements, optical transmission, scanning electron microscopy and atomic force microscopy for their structural, electrical, optical and morphological properties. The influence of spin parameters, number of coating, process temperature on the quality of In2O3 films are studied. In the operating range of deposition, 400-475 degrees C, all the films showed predominant (2 2 2) orientation. Films deposited at optimum process conditions exhibited a resistivity of 2 x 10(-2) Omega cm along with the average transmittance of about 80% in the visible spectral range (400-700nm). (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1380 / 1389

页数：10

共 47 条

[1] A study of the optical, electrical and structural properties of reactively sputtered InOx and ITOx films [J].