Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition

被引:3
作者
Ma, TP [1 ]
机构
[1] Yale Univ, Ctr Microelect Struct & Mat, Dept Elect Engn, New Haven, CT 06520 USA
关键词
gate dielectrics; jet-vapor deposition; MOSFET;
D O I
10.1016/S0026-2692(03)00026-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The principle of the Jet-Vapor Deposition (JVD) technique for thin dielectric deposition will be introduced, the properties of JVD silicon nitride (SiN), silicon oxide, and oxide/nitride/oxide (ONO) stacks as MOS gate dielectrics for Si, SiC, and GaN will be presented. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:363 / 370
页数:8
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