Vapour sensitivity of InP Surface Quantum Dots

被引：4

作者：

De Angelis, Roberta ^{[1
,2
]}

Casalboni, Mauro ^{[1
,2
]}

D'Amico, Liliana ^{[2
,3
]}

De Matteis, Fabio ^{[1
,2
]}

Hatami, Fariba ^{[4
]}

Masselink, William T. ^{[4
]}

Prosposito, Paolo ^{[1
,2
]}

机构：

[1] Univ Roma Tor Vergata, Dept Phys, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, INSTM, I-00133 Rome, Italy

[3] Univ Roma Tor Vergata, Dept Ind Engn, I-00133 Rome, Italy

[4] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany

来源：

MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS III | 2014年 / 605卷

关键词：

Vapour sensor; Quantum Dots; InP; Photoluminescence;

D O I：

10.4028/www.scientific.net/KEM.605.177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the effect of solvent vapours on the photoluminescent emission of self-assembled InP surface quantum dots (SQDs). Their room temperature near infrared emission undergoes a fully reversible intensity enhancement when the dots were exposed to vapours of polar solvents since polar molecules are likely to be adsorbed onto intrinsic surface states and thus reducing non radiative surface recombination. The shape and position of the emission band does not change. The observed effect is dependent on solvent type and concentration with linear law over a limited concentration range.

引用

页码：177 / 180

页数：4

共 9 条

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