Study on the catalyst effect of NaCl on MoS2 growth in a chemical vapor deposition process

被引:26
|
作者
Chen, Long [1 ]
Zang, Lingyu [1 ]
Chen, Luhua [1 ]
Wu, Jinchao [1 ]
Jiang, Chengming [1 ]
Song, Jinhui [1 ]
机构
[1] Dalian Univ Technol, Sch Mech Engn, Dalian 116024, Peoples R China
关键词
CVD;
D O I
10.1039/d1ce00525a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Due to its unique two-dimensional (2D) structural characteristics, monolayer MoS2 is considered to be an ideal material for next-generation optoelectronic devices. At present, chemical vapor deposition (CVD) growth is the suitable technology for preparing MoS2. In order to improve the growth quality of MoS2, NaCl is often used as a catalyst in the synthesis. However, the catalyst has negative effects on the grown MoS2 morphology even though it can facilitate the growth. Here, we study the partial multilayer growth in the MoS2 synthesis caused by the NaCl catalyst, and then propose a mechanism for understanding the growth phenomena. The study provides theoretical guidance and reference for synthesizing high-quality monolayer MoS2.
引用
收藏
页码:5337 / 5344
页数:8
相关论文
共 50 条
  • [41] The effect of catalyst evolution at various temperatures on carbon nanostructures formed by chemical vapor deposition
    Kang, Jianli
    Li, Jiajun
    Zhao, Naiqin
    Du, Xiwen
    Shi, Chunsheng
    Nash, Philip
    JOURNAL OF MATERIALS SCIENCE, 2009, 44 (10) : 2471 - 2476
  • [42] Effect of catalyst on carbon nanotubes synthesis on titanium diboride via chemical vapor deposition
    Lin, Jia
    Yang, Yihang
    Zhang, Houan
    Li, Fenqhmg
    Huang, Guimei
    Wang, Jinhuo
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2020, 103 (08) : 4691 - 4699
  • [43] Growth of carbon nanotubes by chemical vapor deposition
    Jung, M
    Eun, KY
    Lee, JK
    Baik, YJ
    Lee, KR
    Park, JW
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 1235 - 1240
  • [44] Rheotaxial diamond growth by chemical vapor deposition
    Fang, PH
    Hou, L
    MATERIALS RESEARCH INNOVATIONS, 2000, 3 (06) : 360 - 364
  • [45] Controlled growth of millimeter-size continuous bilayer MoS2 films on SiO2 substrates by chemical vapour deposition technique
    Patra, Umakanta
    Mujeeb, Faiha
    Abhiram, K.
    Israni, Jai
    Dhar, Subhabrata
    SURFACES AND INTERFACES, 2025, 58
  • [46] Residence Time Effect on the Growth of ZrC by Low Pressure Chemical Vapor Deposition
    Park, Jong Hoon
    Jung, Choong Hwan
    Kim, Do Sin
    Park, Ji Yeon
    JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2008, 45 (05) : 280 - 284
  • [47] Parametric Modeling and Optimization of Chemical Vapor Deposition Process
    Lin, Po Ting
    Jaluria, Yogesh
    Gea, Hae Chang
    JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME, 2009, 131 (01): : 0110111 - 0110117
  • [48] PARAMETRIC MODELING AND OPTIMIZATION OF CHEMICAL VAPOR DEPOSITION PROCESS
    Lin, Po Ting
    Jaluria, Yogesh
    Gea, Hae Chang
    DETC 2008: PROCEEDINGS OF THE ASME INTERNATIONAL DESIGN ENGINEERING TECHNICAL CONFERENCES AND COMPUTERS AND INFORMATION IN ENGINEERING CONFERENCE, VOL 1, PTS A AND B: 34TH DESIGN AUTOMATION CONFERENCE, 2009, : 757 - 766
  • [49] NIO DEPOSITION ON SUPPORT DURING PREPARATION OF NI/SIO2 CATALYST BY CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, T
    OHTA, H
    YANO, M
    HARANO, Y
    KAGAKU KOGAKU RONBUNSHU, 1990, 16 (03) : 571 - 578
  • [50] van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst
    Hwang, Jeonghyun
    Kim, Moonkyung
    Campbell, Dorr
    Alsalman, Hussain A.
    Kwak, Joon Young
    Shivaraman, Shriram
    Woll, Arthur R.
    Singh, Arunima K.
    Hennig, Richard G.
    Gorantla, Sandeep
    Ruemmeli, Mark H.
    Spencer, Michael G.
    ACS NANO, 2013, 7 (01) : 385 - 395