Synchrotron radiation photoemission study of the ultrathin Cs/InN interface

被引：3

作者：

Benemanskaya, G. V. ^{[1
,2
]}

Lapushkin, M. N. ^{[1
,2
]}

Timoshnev, S. N. ^{[1
,2
]}

Nelubov, A. V. ^{[3
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Inst Problems Mech Engn, St Petersburg 199178, Russia

[3] Helmholtz Zentrum Berlin Mat & Energie, Elektronenspeicherring BESSY 2, D-12489 Berlin, Germany

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 217卷

基金：

俄罗斯科学基金会;

关键词：

III-Nitrides; Metal-InN interface; Electronic structure; Photoemission spectroscopy; BAND-GAP; ELECTRONIC-STRUCTURE; CS ADSORPTION; HEXAGONAL INN; ENERGY; POLAR; FILMS;

D O I：

10.1016/j.ssc.2015.05.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electronic structure of the ultrathin Cs/n-InN interface has been studied in situ via synchrotron-based photoemission spectroscopy by excitation in the energy range of 70-400 eV. Changes in the In 4d, Cs 4d, Cs 5p, N 2s core level spectra and in the surface state spectra have been revealed under different cesium coverages. The intrinsic surface state for the clean InN surface at binding energy of 2.5 eV (SS1) is found to attenuate during the Cs adsorption. Simultaneously the Cs induced surface state at binding energy of 0.9 eV (SS2) arises. For the Cs/InN interface, the In 4d peak displays the strong core level shift and the appearance of an additional In 4d peak originated from In-Cs interface bonding. Change in the surface electronic structure of the InN caused by Cs adsorption is found to originate predominantly from suppression of the intrinsic surface state concerned with the local interaction of In dangling bonds and Cs adatoms. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：34 / 37

页数：4

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