Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

被引：15

作者：

Guo, Qianqian ^{[1
,2
]}

Lu, Fei ^{[1
,2
]}

Tan, Qiulin ^{[1
,2
]}

Zhou, Tianhao ^{[1
,2
]}

Xiong, Jijun ^{[1
,2
]}

Zhang, Wendong ^{[1
,2
]}

机构：

[1] North Univ China, Key Lab Instrumentat Sci & Dynam Measurement, Minist Educ, Taiyuan 030051, Shanxi, Peoples R China

[2] North Univ China, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Shanxi, Peoples R China

来源：

SENSORS | 2019年 / 19卷 / 02期

基金：

中国国家自然科学基金;

关键词：

high-temperature; Schottky diodes; Al2O3; a-IGZO; THIN-FILM TRANSISTORS; OXIDE SEMICONDUCTOR;

D O I：

10.3390/s19020224

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21-400 degrees C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ?(B), and temperature. The sensitivity of the diode sensors is 0.81 mV/degrees C, 1.37 mV/degrees C, and 1.59 mV/degrees C when the forward current density of the diode is 1 x 10(-5) A/cm(2), 1 x 10(-4) A/cm(2), and 1 x 10(-3) A/cm(2), respectively.

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