Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

被引：22

作者：

Bouchama, I. ^{[1
,2
]}

Djessas, K. ^{[1
]}

Djahli, F. ^{[2
]}

Bouloufa, A. ^{[3
]}

机构：

[1] CNRS, Lab Proc Mat & Energie Solaire PROMES, F-66100 Perpignan, France

[2] Univ Ferhat Abbas Setif, Lab LIS, Setif, Algeria

[3] Univ Ferhat Abbas Setif, Labs CCNS & EM, Setif, Algeria

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

Cu(In; Ga)Se-2; Superstrate solar cell; AMPS-1D; Ordered defect compound; In2Se3;

D O I：

10.1016/j.tsf.2011.01.182

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we report on the performances of superstrate Cu(In,Ga)Se-2 (CIGS) thin film solar cells with an alternative SLG/SnO2:F/CIGS/In2Se3/Zn structure using AMPS-1D (Analysis of Microelectronic and Photonic structures) device simulator. An inverted surface layer, n-type CIGS layer, is inserted between the In2Se3 buffer and CIGS absorber layers and the SnO2:F layer is just a transparent conducting oxide (TCO). The simulation has been carried out by lighting through SnO2:F. The obtained results show that the existence of so-called 'ordered defect compound' (ODC) layer in such a structure is the critical factor responsible for the optimization of the performances. Photovoltaic parameters were determined using the current density-voltage (J-V) curve. An optimal absorber and ODC layer thickness has been estimated, that improve significantly the devices efficiency exceeding 15% AM1.5 G. The variation of carrier density in In2Se3 layer has an influence on the superstrate CIGS cells performances. Moreover, the quantum efficiency (Q.E.) characteristics display a maximum value of about 80% in the visible range. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7280 / 7283

页数：4

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