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Experiment and Numerical Simulation of p-i-n Photodetectors Integrated with Different Reflectors
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作者:

Chen, Jing
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机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China

Huang, Yongqing
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机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China

Duan, Xiaofeng
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机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China

Liu, Kai
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机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China

Ren, Xiaomin
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机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China
机构:
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China
来源:
2018 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)
|
2018年
基金:
高等学校博士学科点专项科研基金;
关键词:
Photodetector;
p-i-n;
reflector;
quantum efficiency;
bandwidth-efficiency product;
D O I:
暂无
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
Different reflector-integrated p-i-n photodetectors are fabricated and characterized. The optimal thickness of the absorption layer of the integrated device is obtained by simulation. Compared with experimental results, the reliability of the simulation is demonstrated.
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页数:3
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